Robust $T$-Linear Resistivity due to SU(4) Valley + Spin Fluctuation Mechanism in Magic Angle Twisted Bilayer Graphene
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arXiv
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| Auteurs principaux: | , , |
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| Format: | Preprint |
| Publié: |
2023
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| _version_ | 1866914806122938368 |
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| author | Inoue, Daisuke Onari, Seiichiro Kontani, Hiroshi |
| author_facet | Inoue, Daisuke Onari, Seiichiro Kontani, Hiroshi |
| contents | In the magic angle twisted bilayer graphene (MATBG), non-Fermi liquid like transport phenomena are universally observed. To understand their origin, we perform the self-consistent analysis of the self-energy due to SU(4) valley + spin fluctuations induced by the electron-electron correlation. In the SU(4) fluctuation mechanism, the fifteen channels of fluctuations contribute additively to the self-energy. Therefore, the SU(4) fluctuation mechanism gives much higher electrical resistance than the spin fluctuation mechanism. By the same reason, SU(4) fluctuations of intermediate strength provide $T$-linear resistivity down to $\sim1$K. Interestingly, the $T$-linear resistivity is robustly realizedfor wide range of electron filling, even away from the van-Hove filling. This study provides a strong evidence for the importance of electron-electron correlation in MATBG. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_16042 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Robust $T$-Linear Resistivity due to SU(4) Valley + Spin Fluctuation Mechanism in Magic Angle Twisted Bilayer Graphene Inoue, Daisuke Onari, Seiichiro Kontani, Hiroshi Strongly Correlated Electrons Superconductivity In the magic angle twisted bilayer graphene (MATBG), non-Fermi liquid like transport phenomena are universally observed. To understand their origin, we perform the self-consistent analysis of the self-energy due to SU(4) valley + spin fluctuations induced by the electron-electron correlation. In the SU(4) fluctuation mechanism, the fifteen channels of fluctuations contribute additively to the self-energy. Therefore, the SU(4) fluctuation mechanism gives much higher electrical resistance than the spin fluctuation mechanism. By the same reason, SU(4) fluctuations of intermediate strength provide $T$-linear resistivity down to $\sim1$K. Interestingly, the $T$-linear resistivity is robustly realizedfor wide range of electron filling, even away from the van-Hove filling. This study provides a strong evidence for the importance of electron-electron correlation in MATBG. |
| title | Robust $T$-Linear Resistivity due to SU(4) Valley + Spin Fluctuation Mechanism in Magic Angle Twisted Bilayer Graphene |
| topic | Strongly Correlated Electrons Superconductivity |
| url | https://arxiv.org/abs/2312.16042 |