Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
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arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2023
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| _version_ | 1866910448855547904 |
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| author | Chiu, Yun-Pin Huang, Hsin-Wen Wu, Yuh-Renn |
| author_facet | Chiu, Yun-Pin Huang, Hsin-Wen Wu, Yuh-Renn |
| contents | Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this may be used in device applications such as pin diodes and photovoltaic cells. In this study, we exploit this property to design n- and p-type metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use density-functional theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in electron and hole accumulation to form n- and p-type Ohmic contact regions. We incorporate this property into a 2D finite-element-based Poisson-drift-diffusion solver to perform simulations, on the basis of which we design complementary MOSFETs. Our results demonstrate that JTMDs can be used to make n- and p-MOSFETs in the same layer without the need for any extra doping. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_17594 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors Chiu, Yun-Pin Huang, Hsin-Wen Wu, Yuh-Renn Materials Science Applied Physics Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this may be used in device applications such as pin diodes and photovoltaic cells. In this study, we exploit this property to design n- and p-type metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use density-functional theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in electron and hole accumulation to form n- and p-type Ohmic contact regions. We incorporate this property into a 2D finite-element-based Poisson-drift-diffusion solver to perform simulations, on the basis of which we design complementary MOSFETs. Our results demonstrate that JTMDs can be used to make n- and p-MOSFETs in the same layer without the need for any extra doping. |
| title | Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2312.17594 |