Molecular Hybridization Induced Antidamping and Sizable Enhanced Spin-to-Charge Conversion in Co20Fe60B20/$β$-W/C60 Heterostructures
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2023
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| _version_ | 1866911744697303040 |
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| author | Sahoo, Antarjami Mukhopadhyaya, Aritra Mahanta, Swayang Priya Ali, Md. Ehesan Bedanta, Subhankar |
| author_facet | Sahoo, Antarjami Mukhopadhyaya, Aritra Mahanta, Swayang Priya Ali, Md. Ehesan Bedanta, Subhankar |
| contents | Development of power efficient spintronics devices has been the compelling need in the post-CMOS technology era. The effective tunability of spin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materials stacking is a prerequisite for scaling down the dimension and power consumption of these devices. In this work, we demonstrate the strong chemisorption of C60 molecules when grown on the high SOC $β$-W layer. The parent CFB/$β$-W bilayer exhibits large spin-to-charge interconversion efficiency, which can be ascribed to the interfacial SOC observed at the Ferromagnet/Heavy metal interface. Further, the adsorption of C60 molecules on $β$-W reduces the effective Gilbert damping by $\sim$15% in the CFB/$β$-W/C60 heterostructures. The anti-damping is accompanied by a gigantic $\sim$115% enhancement in the spin-pumping induced output voltage owing to the molecular hybridization. The non-collinear Density Functional Theory calculations confirm the long-range enhancement of SOC of $β$-W upon the chemisorption of C60 molecules, which in turn can also enhance the SOC at the CFB/$β$-W interface in CFB/$β$-W/C60 heterostructures. The combined amplification of bulk as well interfacial SOC upon molecular hybridization stabilizes the anti-damping and enhanced spin-to-charge conversion, which can pave the way for the fabrication of power efficient spintronics devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_00486 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Molecular Hybridization Induced Antidamping and Sizable Enhanced Spin-to-Charge Conversion in Co20Fe60B20/$β$-W/C60 Heterostructures Sahoo, Antarjami Mukhopadhyaya, Aritra Mahanta, Swayang Priya Ali, Md. Ehesan Bedanta, Subhankar Materials Science Development of power efficient spintronics devices has been the compelling need in the post-CMOS technology era. The effective tunability of spin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materials stacking is a prerequisite for scaling down the dimension and power consumption of these devices. In this work, we demonstrate the strong chemisorption of C60 molecules when grown on the high SOC $β$-W layer. The parent CFB/$β$-W bilayer exhibits large spin-to-charge interconversion efficiency, which can be ascribed to the interfacial SOC observed at the Ferromagnet/Heavy metal interface. Further, the adsorption of C60 molecules on $β$-W reduces the effective Gilbert damping by $\sim$15% in the CFB/$β$-W/C60 heterostructures. The anti-damping is accompanied by a gigantic $\sim$115% enhancement in the spin-pumping induced output voltage owing to the molecular hybridization. The non-collinear Density Functional Theory calculations confirm the long-range enhancement of SOC of $β$-W upon the chemisorption of C60 molecules, which in turn can also enhance the SOC at the CFB/$β$-W interface in CFB/$β$-W/C60 heterostructures. The combined amplification of bulk as well interfacial SOC upon molecular hybridization stabilizes the anti-damping and enhanced spin-to-charge conversion, which can pave the way for the fabrication of power efficient spintronics devices. |
| title | Molecular Hybridization Induced Antidamping and Sizable Enhanced Spin-to-Charge Conversion in Co20Fe60B20/$β$-W/C60 Heterostructures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.00486 |