Saved in:
Bibliographic Details
Main Authors: Yao, Jingyu, Sheng, Haohao, Zhang, Ruihan, Pang, Rongtian, Zhou, Jin-Jian, Wu, Quansheng, Weng, Hongming, Dai, Xi, Fang, Zhong, Wang, Zhijun
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2401.01222
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866911999780192256
author Yao, Jingyu
Sheng, Haohao
Zhang, Ruihan
Pang, Rongtian
Zhou, Jin-Jian
Wu, Quansheng
Weng, Hongming
Dai, Xi
Fang, Zhong
Wang, Zhijun
author_facet Yao, Jingyu
Sheng, Haohao
Zhang, Ruihan
Pang, Rongtian
Zhou, Jin-Jian
Wu, Quansheng
Weng, Hongming
Dai, Xi
Fang, Zhong
Wang, Zhijun
contents By systematic theoretical calculations, we have revealed an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke-Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization $α_{2D}$ would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the GW plus Bethe-Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta2Pd3Te5 monolayer is an excitonic insulator without structural distortion.
format Preprint
id arxiv_https___arxiv_org_abs_2401_01222
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Excitonic Instability in Ta2Pd3Te5 Monolayer
Yao, Jingyu
Sheng, Haohao
Zhang, Ruihan
Pang, Rongtian
Zhou, Jin-Jian
Wu, Quansheng
Weng, Hongming
Dai, Xi
Fang, Zhong
Wang, Zhijun
Materials Science
Computational Physics
By systematic theoretical calculations, we have revealed an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke-Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization $α_{2D}$ would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the GW plus Bethe-Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta2Pd3Te5 monolayer is an excitonic insulator without structural distortion.
title Excitonic Instability in Ta2Pd3Te5 Monolayer
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2401.01222