Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride
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arXiv
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866910285748502528 |
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| author | Hsieh, Yu-Chiang Lin, Zhen-You Fung, Shin-Ji Lu, Wen-Shin Ho, Sheng-Chin Hong, Siang-Ping Ho, Sheng-Zhu Huang, Chiu-Hua Watanabe, Kenji Taniguchi, Takashi Chan, Yang-Hao Chen, Yi-Chun Wu, Chung-Lin Chen, Tse-Ming |
| author_facet | Hsieh, Yu-Chiang Lin, Zhen-You Fung, Shin-Ji Lu, Wen-Shin Ho, Sheng-Chin Hong, Siang-Ping Ho, Sheng-Zhu Huang, Chiu-Hua Watanabe, Kenji Taniguchi, Takashi Chan, Yang-Hao Chen, Yi-Chun Wu, Chung-Lin Chen, Tse-Ming |
| contents | Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_01300 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride Hsieh, Yu-Chiang Lin, Zhen-You Fung, Shin-Ji Lu, Wen-Shin Ho, Sheng-Chin Hong, Siang-Ping Ho, Sheng-Zhu Huang, Chiu-Hua Watanabe, Kenji Taniguchi, Takashi Chan, Yang-Hao Chen, Yi-Chun Wu, Chung-Lin Chen, Tse-Ming Mesoscale and Nanoscale Physics Materials Science Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices. |
| title | Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2401.01300 |