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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.03377 |
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| _version_ | 1866918055862337536 |
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| author | Yanagisawa, Tatsuya Hibino, Ruo Hidaka, Hiroyuki Amitsuka, Hiroshi Tashima, Toshiyuki Akatsu, Mitsuhiro Nemoto, Yuichi Zherlitsyn, Sergei Wosnitza, Joachim |
| author_facet | Yanagisawa, Tatsuya Hibino, Ruo Hidaka, Hiroyuki Amitsuka, Hiroshi Tashima, Toshiyuki Akatsu, Mitsuhiro Nemoto, Yuichi Zherlitsyn, Sergei Wosnitza, Joachim |
| contents | This study reveals a previously unreported phenomenon: elastic softening of synthetic diamonds at temperatures below 1 K. We present ultrasonic measurements on single-crystalline, non-irradiated synthetic diamonds--namely, type-IIa (colorless) and type-Ib (yellow) diamonds grown by high-pressure high-temperature (HPHT) synthesis, as well as type-IIa diamond grown by chemical vapor deposition (CVD). A pronounced, divergent decrease in the elastic stiffness constant $C_{44}$ was observed in all samples down to 20 mK. We attribute this softening to electric quadrupolar degrees of freedom with irreducible representation $T_2$ in diamond. The microscopic origin of this effect, however, remains unresolved. By analogy with similar behavior observed in silicon, we suggest the presence of an as-yet-unidentified, defect-derived quantum ground state with $T_1$ or $T_2$ symmetry at ppb-level concentrations in all three diamonds studied. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_03377 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Elastic Softening in Synthetic Diamonds Yanagisawa, Tatsuya Hibino, Ruo Hidaka, Hiroyuki Amitsuka, Hiroshi Tashima, Toshiyuki Akatsu, Mitsuhiro Nemoto, Yuichi Zherlitsyn, Sergei Wosnitza, Joachim Materials Science Strongly Correlated Electrons Applied Physics This study reveals a previously unreported phenomenon: elastic softening of synthetic diamonds at temperatures below 1 K. We present ultrasonic measurements on single-crystalline, non-irradiated synthetic diamonds--namely, type-IIa (colorless) and type-Ib (yellow) diamonds grown by high-pressure high-temperature (HPHT) synthesis, as well as type-IIa diamond grown by chemical vapor deposition (CVD). A pronounced, divergent decrease in the elastic stiffness constant $C_{44}$ was observed in all samples down to 20 mK. We attribute this softening to electric quadrupolar degrees of freedom with irreducible representation $T_2$ in diamond. The microscopic origin of this effect, however, remains unresolved. By analogy with similar behavior observed in silicon, we suggest the presence of an as-yet-unidentified, defect-derived quantum ground state with $T_1$ or $T_2$ symmetry at ppb-level concentrations in all three diamonds studied. |
| title | Elastic Softening in Synthetic Diamonds |
| topic | Materials Science Strongly Correlated Electrons Applied Physics |
| url | https://arxiv.org/abs/2401.03377 |