Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect

Fuente: arXiv
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Bibliographic Details
Main Authors: Yuan, Yuan, Peng, Yiwei, Cheung, Stanley, Sorin, Wayne V., Huang, Zhihong, Liang, Di, Fiorentino, Marco, Beausoleil, Raymond G.
Format: Preprint
Published: 2024
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author Yuan, Yuan
Peng, Yiwei
Cheung, Stanley
Sorin, Wayne V.
Huang, Zhihong
Liang, Di
Fiorentino, Marco
Beausoleil, Raymond G.
author_facet Yuan, Yuan
Peng, Yiwei
Cheung, Stanley
Sorin, Wayne V.
Huang, Zhihong
Liang, Di
Fiorentino, Marco
Beausoleil, Raymond G.
contents Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been demonstrated exclusively using the semiconductor primary material, silicon. By manipulating the optoelectronic effect of this device, we introduce a hysteresis effect at the silicon-silicon oxide interface, which in turn demonstrates multi-level, non-volatile optical data storage with robust retention and endurance. This new silicon optical memory provides a distinctively simple and accessible route to realize optical data storage in standard silicon foundry processes.
format Preprint
id arxiv_https___arxiv_org_abs_2401_03414
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect
Yuan, Yuan
Peng, Yiwei
Cheung, Stanley
Sorin, Wayne V.
Huang, Zhihong
Liang, Di
Fiorentino, Marco
Beausoleil, Raymond G.
Applied Physics
Optics
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been demonstrated exclusively using the semiconductor primary material, silicon. By manipulating the optoelectronic effect of this device, we introduce a hysteresis effect at the silicon-silicon oxide interface, which in turn demonstrates multi-level, non-volatile optical data storage with robust retention and endurance. This new silicon optical memory provides a distinctively simple and accessible route to realize optical data storage in standard silicon foundry processes.
title Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect
topic Applied Physics
Optics
url https://arxiv.org/abs/2401.03414