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| Auteurs principaux: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Accès en ligne: | https://arxiv.org/abs/2401.04365 |
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| author | Yukumoto, Masataka Mori, Koji Takeda, Ayaki Nishioka, Yusuke Yonemura, Syuto Izumi, Daisuke Iwakiri, Uzuki Tsuru, Takeshi G. Kurachi, Ikuo Hagino, Kouichi Arai, Yasuo Kohmura, Takayoshi Tanaka, Takaaki Kimura, Miraku Fuchita, Yuta Yoshida, Taiga Ikeda, Tomonori |
| author_facet | Yukumoto, Masataka Mori, Koji Takeda, Ayaki Nishioka, Yusuke Yonemura, Syuto Izumi, Daisuke Iwakiri, Uzuki Tsuru, Takeshi G. Kurachi, Ikuo Hagino, Kouichi Arai, Yasuo Kohmura, Takayoshi Tanaka, Takaaki Kimura, Miraku Fuchita, Yuta Yoshida, Taiga Ikeda, Tomonori |
| contents | We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO$_{2}$ interface and to fix the back-gate voltage of the SOI transistors. An n-well is further introduced between the p-well and the substrate to make a potential barrier between them and suppress a leakage current. An optimization study on the n-well dopant concentration is necessary because a higher dopant concentration could result in a higher potential barrier but also in a larger sense-node capacitance leading to a lower spectroscopic performance, and vice versa. Based on a device simulation, we fabricated five candidate chips having different n-well dopant concentrations. We successfully found out the best n-well design, which suppressed a large leakage current and showed satisfactory X-ray spectroscopic performance. Too low and too high n-well dopant concentration chips showed a large leakage current and degraded X-ray spectroscopic performance, respectively. We also found that the dependency of X-ray spectroscopic performance on the n-well dopant concentration can be largely explained by the difference in sense-node capacitance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_04365 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy Yukumoto, Masataka Mori, Koji Takeda, Ayaki Nishioka, Yusuke Yonemura, Syuto Izumi, Daisuke Iwakiri, Uzuki Tsuru, Takeshi G. Kurachi, Ikuo Hagino, Kouichi Arai, Yasuo Kohmura, Takayoshi Tanaka, Takaaki Kimura, Miraku Fuchita, Yuta Yoshida, Taiga Ikeda, Tomonori Instrumentation and Methods for Astrophysics We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO$_{2}$ interface and to fix the back-gate voltage of the SOI transistors. An n-well is further introduced between the p-well and the substrate to make a potential barrier between them and suppress a leakage current. An optimization study on the n-well dopant concentration is necessary because a higher dopant concentration could result in a higher potential barrier but also in a larger sense-node capacitance leading to a lower spectroscopic performance, and vice versa. Based on a device simulation, we fabricated five candidate chips having different n-well dopant concentrations. We successfully found out the best n-well design, which suppressed a large leakage current and showed satisfactory X-ray spectroscopic performance. Too low and too high n-well dopant concentration chips showed a large leakage current and degraded X-ray spectroscopic performance, respectively. We also found that the dependency of X-ray spectroscopic performance on the n-well dopant concentration can be largely explained by the difference in sense-node capacitance. |
| title | Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy |
| topic | Instrumentation and Methods for Astrophysics |
| url | https://arxiv.org/abs/2401.04365 |