Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Fuente: arXiv

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Bibliographic Details
Main Authors:	Talukder, A B M Hasan, Kashem, Md Tashfiq Bin, Khan, Raihan, Dirisaglik, Faruk, Gokirmak, Ali, Silva, Helena
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2401.04909