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Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Talukder, A B M Hasan, Kashem, Md Tashfiq Bin, Khan, Raihan, Dirisaglik, Faruk, Gokirmak, Ali, Silva, Helena
Formato:	Preprint
Publicado:	2024
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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