Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912133312151552 |
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| author | Mientjes, Mathijs G. C. Guan, Xin Lueb, Pim J. H. Verheijen, Marcel A. Bakkers, Erik P. A. M. |
| author_facet | Mientjes, Mathijs G. C. Guan, Xin Lueb, Pim J. H. Verheijen, Marcel A. Bakkers, Erik P. A. M. |
| contents | Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2401_04990 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio Mientjes, Mathijs G. C. Guan, Xin Lueb, Pim J. H. Verheijen, Marcel A. Bakkers, Erik P. A. M. Materials Science Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform. |
| title | Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.04990 |