Wafer-scale CMOS-compatible graphene Josephson field-effect transistors
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arXiv
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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866908044643794944 |
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| author | Generalov, Andrey A. Viisanen, Klaara L. Senior, Jorden Ferreira, Bernardo R. Ma, Jian Möttönen, Mikko Prunnila, Mika Bohuslavskyi, Heorhii |
| author_facet | Generalov, Andrey A. Viisanen, Klaara L. Senior, Jorden Ferreira, Bernardo R. Ma, Jian Möttönen, Mikko Prunnila, Mika Bohuslavskyi, Heorhii |
| contents | Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS) compatible processing based on wet transfer of chemical vapour deposited graphene, atomic-layer-deposited Al$_{2}$O$_{3}$ gate oxide, and evaporated superconducting Ti/Al source, drain, and gate contacts. By optimizing the contact resistance down to $\sim$ 170 $Ωμm$, we observe proximity-induced superconductivity in the JoFET channels with different gate lengths of 150 - 350 nm. The Josephson junction devices show reproducible critical current $I_{\text{C}}$ tunablity with the local top gate. Our JoFETs are in short diffusive limit with the $I_{\text{C}}$ reaching up to $\sim\,$3 $μA$ for a 50 $μm$ channel width. Overall, our demonstration of CMOS-compatible 2D-material-based JoFET fabrication process is an important step toward graphene-based integrated quantum circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_05089 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Wafer-scale CMOS-compatible graphene Josephson field-effect transistors Generalov, Andrey A. Viisanen, Klaara L. Senior, Jorden Ferreira, Bernardo R. Ma, Jian Möttönen, Mikko Prunnila, Mika Bohuslavskyi, Heorhii Applied Physics Mesoscale and Nanoscale Physics Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS) compatible processing based on wet transfer of chemical vapour deposited graphene, atomic-layer-deposited Al$_{2}$O$_{3}$ gate oxide, and evaporated superconducting Ti/Al source, drain, and gate contacts. By optimizing the contact resistance down to $\sim$ 170 $Ωμm$, we observe proximity-induced superconductivity in the JoFET channels with different gate lengths of 150 - 350 nm. The Josephson junction devices show reproducible critical current $I_{\text{C}}$ tunablity with the local top gate. Our JoFETs are in short diffusive limit with the $I_{\text{C}}$ reaching up to $\sim\,$3 $μA$ for a 50 $μm$ channel width. Overall, our demonstration of CMOS-compatible 2D-material-based JoFET fabrication process is an important step toward graphene-based integrated quantum circuits. |
| title | Wafer-scale CMOS-compatible graphene Josephson field-effect transistors |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2401.05089 |