Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866911753992929280 |
|---|---|
| author | Naik, B. Raju Chandran, Yadu Rohini, Kakunuri Verma, Divya Ramanathan, Shriram Balakrishnan, Viswanath |
| author_facet | Naik, B. Raju Chandran, Yadu Rohini, Kakunuri Verma, Divya Ramanathan, Shriram Balakrishnan, Viswanath |
| contents | Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the discovery of discrete threshold switching voltages with constant threshold voltage difference between cycles in vanadium oxide crystals. The observed threshold fields over 10000 cycles are ~100X lower than that noted for stoichiometric VO2 and show unique discrete behaviour. We correlate the observed discrete memristor behaviour with the valence change mechanism and fluctuations in the chemical composition of spatially distributed VO2-VnO2n-1 complex oxide phases. Design of chemical heterogeneity in Mott insulators, therefore, offers an intriguing path to realizing low-energy neuromorphic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_05222 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals Naik, B. Raju Chandran, Yadu Rohini, Kakunuri Verma, Divya Ramanathan, Shriram Balakrishnan, Viswanath Applied Physics Materials Science Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the discovery of discrete threshold switching voltages with constant threshold voltage difference between cycles in vanadium oxide crystals. The observed threshold fields over 10000 cycles are ~100X lower than that noted for stoichiometric VO2 and show unique discrete behaviour. We correlate the observed discrete memristor behaviour with the valence change mechanism and fluctuations in the chemical composition of spatially distributed VO2-VnO2n-1 complex oxide phases. Design of chemical heterogeneity in Mott insulators, therefore, offers an intriguing path to realizing low-energy neuromorphic devices. |
| title | Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2401.05222 |