Orbital Hanle Magnetoresistance in a 3d Transition Metal

Fuente: arXiv
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Autori principali: Sala, Giacomo, Wang, Hanchen, Legrand, William, Gambardella, Pietro
Natura: Preprint
Pubblicazione: 2024
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author Sala, Giacomo
Wang, Hanchen
Legrand, William
Gambardella, Pietro
author_facet Sala, Giacomo
Wang, Hanchen
Legrand, William
Gambardella, Pietro
contents The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle magnetoresistance in single layers of Mn with weak spin-orbit coupling, which we attribute to the orbital Hall effect. The simultaneous observation of a sizable Hanle magnetoresistance and vanishing small spin Hall magnetoresistance in BiYIG/Mn bilayers corroborates the orbital origin of both effects. We estimate an orbital Hall angle of 0.016, an orbital relaxation time of 2 ps and diffusion length of the order of 2 nm in disordered Mn. Our findings indicate that current-induced orbital moments are responsible for magnetoresistance effects comparable to or even larger than those determined by spin moments, and provide a tool to investigate nonequilibrium orbital transport phenomena.
format Preprint
id arxiv_https___arxiv_org_abs_2401_05703
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Orbital Hanle Magnetoresistance in a 3d Transition Metal
Sala, Giacomo
Wang, Hanchen
Legrand, William
Gambardella, Pietro
Mesoscale and Nanoscale Physics
The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle magnetoresistance in single layers of Mn with weak spin-orbit coupling, which we attribute to the orbital Hall effect. The simultaneous observation of a sizable Hanle magnetoresistance and vanishing small spin Hall magnetoresistance in BiYIG/Mn bilayers corroborates the orbital origin of both effects. We estimate an orbital Hall angle of 0.016, an orbital relaxation time of 2 ps and diffusion length of the order of 2 nm in disordered Mn. Our findings indicate that current-induced orbital moments are responsible for magnetoresistance effects comparable to or even larger than those determined by spin moments, and provide a tool to investigate nonequilibrium orbital transport phenomena.
title Orbital Hanle Magnetoresistance in a 3d Transition Metal
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2401.05703