Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C

Documenti analoghi

• NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature
  di: Egbo, Kingsley, et al.
  Pubblicazione: (2024)
• From Text to Test: AI-Generated Control Software for Materials Science Instruments
  di: Fébba, Davi M, et al.
  Pubblicazione: (2024)
• Autonomous Reliability Qualification of Ga$_2$O$_3$-based Hydrogen and Temperature Sensors via Safe Active Learning
  di: Febba, Davi, et al.
  Pubblicazione: (2026)
• Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
  di: Schaefer, Stephen, et al.
  Pubblicazione: (2024)
• Stability, growth, and doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as promising n-type wide-gap semiconductors
  di: Lee, Cheng-Wei, et al.
  Pubblicazione: (2025)