Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.07166 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913196265177088 |
|---|---|
| author | Callahan, William A. Egbo, Kingsley Lee, Cheng-Wei Ginley, David O'Hayre, Ryan Zakutayev, Andriy |
| author_facet | Callahan, William A. Egbo, Kingsley Lee, Cheng-Wei Ginley, David O'Hayre, Ryan Zakutayev, Andriy |
| contents | $β$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment sensors. However, the long-term reliability of these ultra-wide band gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p-n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at during extended operation at 600$^\circ$C, as well as after 30 repeated cycles between 25-550$^\circ$C. The calculated pO2-temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga$_2$O$_3$ and Cr$_2$O$_3$ should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr$_2$O$_3$:Mg / $β$-Ga$_2$O$_3$ p-n heterojunction diodes show room-temperature on/off ratios >10$^4$ at $\pm$5V and a breakdown voltage (V$_{Br}$) of -390V. The leakage current increases with increasing temperature up to 600$^\circ$C, which is attributed to Poole-Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-hour thermal soak at 600$^\circ$C, both the device turn-on voltage and on-state resistance increase from 1.08V and 5.34 m$Ω$-cm$^2$ to 1.59V and 7.1 m$Ω$-cm$^2$ respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr$_2$O$_3$/Ga$_2$O$_3$ interface as observed from TOF-SIMS analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for $β$-Ga$_2$O$_3$ based devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_07166 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C Callahan, William A. Egbo, Kingsley Lee, Cheng-Wei Ginley, David O'Hayre, Ryan Zakutayev, Andriy Materials Science $β$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment sensors. However, the long-term reliability of these ultra-wide band gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p-n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at during extended operation at 600$^\circ$C, as well as after 30 repeated cycles between 25-550$^\circ$C. The calculated pO2-temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga$_2$O$_3$ and Cr$_2$O$_3$ should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr$_2$O$_3$:Mg / $β$-Ga$_2$O$_3$ p-n heterojunction diodes show room-temperature on/off ratios >10$^4$ at $\pm$5V and a breakdown voltage (V$_{Br}$) of -390V. The leakage current increases with increasing temperature up to 600$^\circ$C, which is attributed to Poole-Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-hour thermal soak at 600$^\circ$C, both the device turn-on voltage and on-state resistance increase from 1.08V and 5.34 m$Ω$-cm$^2$ to 1.59V and 7.1 m$Ω$-cm$^2$ respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr$_2$O$_3$/Ga$_2$O$_3$ interface as observed from TOF-SIMS analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for $β$-Ga$_2$O$_3$ based devices. |
| title | Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.07166 |