Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.07607 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913196937314304 |
|---|---|
| author | Shin, Dong-Ho Yang, Jun Mukherjee, Samik Bahrami, Amin Lehmann, Sebastian Nasiri, Noushin Krahl, Fabian Pang, Chi Wrzesińska-Lashkova, Angelika Vaynzof, Yana Wohlrab, Steve Popov, Alexey Nielsch, Kornelius |
| author_facet | Shin, Dong-Ho Yang, Jun Mukherjee, Samik Bahrami, Amin Lehmann, Sebastian Nasiri, Noushin Krahl, Fabian Pang, Chi Wrzesińska-Lashkova, Angelika Vaynzof, Yana Wohlrab, Steve Popov, Alexey Nielsch, Kornelius |
| contents | SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. We found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved performances, demonstrating increased peak photoresponsivity values from 19.5 A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next-generation optoelectronic applications based on SnS2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_07607 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | SnS2 thin film with in-situ and controllable Sb doping via atomic layer deposition for optoelectronic applications Shin, Dong-Ho Yang, Jun Mukherjee, Samik Bahrami, Amin Lehmann, Sebastian Nasiri, Noushin Krahl, Fabian Pang, Chi Wrzesińska-Lashkova, Angelika Vaynzof, Yana Wohlrab, Steve Popov, Alexey Nielsch, Kornelius Materials Science SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. We found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved performances, demonstrating increased peak photoresponsivity values from 19.5 A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next-generation optoelectronic applications based on SnS2. |
| title | SnS2 thin film with in-situ and controllable Sb doping via atomic layer deposition for optoelectronic applications |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.07607 |