Coupled vertical double quantum dots at single-hole occupancy
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866911949947666432 |
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| author | Ivlev, Alexander Tidjani, Hanifa Oosterhout, Stefan Sammak, Amir Scappucci, Giordano Veldhorst, Menno |
| author_facet | Ivlev, Alexander Tidjani, Hanifa Oosterhout, Stefan Sammak, Amir Scappucci, Giordano Veldhorst, Menno |
| contents | Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum well. Tuning the vertical double quantum dot to the (1,1) charge state confines a single hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighbouring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_07736 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Coupled vertical double quantum dots at single-hole occupancy Ivlev, Alexander Tidjani, Hanifa Oosterhout, Stefan Sammak, Amir Scappucci, Giordano Veldhorst, Menno Mesoscale and Nanoscale Physics Quantum Physics Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum well. Tuning the vertical double quantum dot to the (1,1) charge state confines a single hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighbouring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing. |
| title | Coupled vertical double quantum dots at single-hole occupancy |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2401.07736 |