Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$

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Hauptverfasser: Huang, Xin, Lado, Jose L., Sainio, Jani, Liljeroth, Peter, Ganguli, Somesh Chandra
Format: Preprint
Veröffentlicht: 2024
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author Huang, Xin
Lado, Jose L.
Sainio, Jani
Liljeroth, Peter
Ganguli, Somesh Chandra
author_facet Huang, Xin
Lado, Jose L.
Sainio, Jani
Liljeroth, Peter
Ganguli, Somesh Chandra
contents The doped Hubbard model is one of the paradigmatic platforms to engineer exotic quantum many-body states, including charge-ordered states, strange metals and unconventional superconductors. While undoped and doped correlated phases have been experimentally realized in a variety twisted van der Waals materials, experiments in monolayer materials, and in particular 1T transition metal dichalcogenides, have solely reached the conventional insulating undoped regime. Correlated phases in monolayer two-dimensional materials have much higher associated energy scales than their twisted counterparts, making doped correlated monolayers an attractive platform for high temperature correlated quantum matter. Here, we demonstrate the realization of a doped Mott phase in a van der Waals dichalcogenide 1T-NbSe$_2$ monolayer. The system is electron doped due to electron transfer to a monolayer van der Waals substrate via proximity, leading to a correlated triangular lattice with both half-filled and fully-filled sites. We analyze the distribution of the half-filled and filled sites and show the arrangement is unlikely to be controlled by disorder alone, and we show that the presence of competing non-local many-body correlations would account for the charge correlations found experimentally. Our results establish 1T-NbSe$_2$ as a potential monolayer platform to explore correlated doped Mott physics in a frustrated lattice.
format Preprint
id arxiv_https___arxiv_org_abs_2401_08296
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$
Huang, Xin
Lado, Jose L.
Sainio, Jani
Liljeroth, Peter
Ganguli, Somesh Chandra
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
The doped Hubbard model is one of the paradigmatic platforms to engineer exotic quantum many-body states, including charge-ordered states, strange metals and unconventional superconductors. While undoped and doped correlated phases have been experimentally realized in a variety twisted van der Waals materials, experiments in monolayer materials, and in particular 1T transition metal dichalcogenides, have solely reached the conventional insulating undoped regime. Correlated phases in monolayer two-dimensional materials have much higher associated energy scales than their twisted counterparts, making doped correlated monolayers an attractive platform for high temperature correlated quantum matter. Here, we demonstrate the realization of a doped Mott phase in a van der Waals dichalcogenide 1T-NbSe$_2$ monolayer. The system is electron doped due to electron transfer to a monolayer van der Waals substrate via proximity, leading to a correlated triangular lattice with both half-filled and fully-filled sites. We analyze the distribution of the half-filled and filled sites and show the arrangement is unlikely to be controlled by disorder alone, and we show that the presence of competing non-local many-body correlations would account for the charge correlations found experimentally. Our results establish 1T-NbSe$_2$ as a potential monolayer platform to explore correlated doped Mott physics in a frustrated lattice.
title Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2401.08296