Pressure tuning of intrinsic and extrinsic sources to the anomalous Hall effect in CrGeTe$_3$

Fuente: arXiv
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Hauptverfasser: Scharf, Gili, Guterding, Daniel, Hen, Bar, Sarte, Paul M., Ortiz, Brenden R., Rozenberg, Gregory Kh., Holder, Tobias, Wilson, Stephen D., Jeschke, Harald O., Ron, Alon
Format: Preprint
Veröffentlicht: 2024
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author Scharf, Gili
Guterding, Daniel
Hen, Bar
Sarte, Paul M.
Ortiz, Brenden R.
Rozenberg, Gregory Kh.
Holder, Tobias
Wilson, Stephen D.
Jeschke, Harald O.
Ron, Alon
author_facet Scharf, Gili
Guterding, Daniel
Hen, Bar
Sarte, Paul M.
Ortiz, Brenden R.
Rozenberg, Gregory Kh.
Holder, Tobias
Wilson, Stephen D.
Jeschke, Harald O.
Ron, Alon
contents The integrated Berry curvature is a geometric property that has dramatic implications for material properties. This study investigates the integrated Berry curvature and other contributions to the anomalous Hall effect in CrGeTe$_3$ as a function of pressure. The anomalous Hall effect is absent in the insulating phase of CrGeTe$_3$ and evolves with pressure in a dome-like fashion as pressure is applied. The dome's edges are characterized by Fermi surface deformations, manifested as mixed electron and hole transport. We corroborate the presence of bipolar transport by ab-initio calculations which also predict a nonmonotonic behavior of the Berry curvature as a function of pressure. Quantitative discrepancies between our calculations and experimental results indicate that additional scattering mechanisms, which are also strongly tuned by pressure, contribute to the anomalous Hall effect in CrGeTe$_3$.
format Preprint
id arxiv_https___arxiv_org_abs_2401_09539
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Pressure tuning of intrinsic and extrinsic sources to the anomalous Hall effect in CrGeTe$_3$
Scharf, Gili
Guterding, Daniel
Hen, Bar
Sarte, Paul M.
Ortiz, Brenden R.
Rozenberg, Gregory Kh.
Holder, Tobias
Wilson, Stephen D.
Jeschke, Harald O.
Ron, Alon
Strongly Correlated Electrons
Materials Science
The integrated Berry curvature is a geometric property that has dramatic implications for material properties. This study investigates the integrated Berry curvature and other contributions to the anomalous Hall effect in CrGeTe$_3$ as a function of pressure. The anomalous Hall effect is absent in the insulating phase of CrGeTe$_3$ and evolves with pressure in a dome-like fashion as pressure is applied. The dome's edges are characterized by Fermi surface deformations, manifested as mixed electron and hole transport. We corroborate the presence of bipolar transport by ab-initio calculations which also predict a nonmonotonic behavior of the Berry curvature as a function of pressure. Quantitative discrepancies between our calculations and experimental results indicate that additional scattering mechanisms, which are also strongly tuned by pressure, contribute to the anomalous Hall effect in CrGeTe$_3$.
title Pressure tuning of intrinsic and extrinsic sources to the anomalous Hall effect in CrGeTe$_3$
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2401.09539