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Bibliographic Details
Main Authors: Mottamchetty, Venkatesh, Brucas, Rimantas, Ravensburg, Anna L., Maciel, Renan, Thonig, Danny, Henk, Jurgen, Gupta, Rahul, Roos, Arne, Tai, Cheuk Wai, Kapaklis, Vassilios, Svedlindh, Peter
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2401.10123
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Table of Contents:
  • We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_{60}$Fe$_{40}$ spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ and $α$-W$(001)$/Co$_{60}$Fe$_{40}(001)$ deposited on single crystalline Al$_{2}$O$_{3}$($11\bar{2}0$) and MgO($001$) substrates, respectively. First principle calculations of the electronic band structure at the W$(001)$ surface reveal Dirac-type surface states, similar to that reported previously for the W$(110)$ surface. The generated THz radiation is about $10\%$ larger for $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ grown on single crystalline Al$_{2}$O$_{3}$($11\bar{2}0$), which is explained by the fact that the $α$-W$(110)$/Co$_{60}$Fe$_{40}(110)$ interface for this emitter is more transparent to the spin current due to the presence of Ångstr\" om-scale interface intermixing at the W/CoFe interface. Our results also reveal that the generation of THz radiation is larger when pumping with the laser light from the substrate side, which is explained by a larger part of the laser light due to interference effects in the film stack being absorbed in the ferromagnetic Co$_{60}$Fe$_{40}$ layer in this measurement configuration.