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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.11475 |
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| _version_ | 1866910304490749952 |
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| author | Chakraborty, Soumya Samanta, Arup |
| author_facet | Chakraborty, Soumya Samanta, Arup |
| contents | The manuscript theoretically discusses various important aspects for donor atom based single qubit operations in silicon (Si) quantum computer architecture at room temperature using a single nitrogen (N) deep-donor close to the Si/SiO2 interface. Quantitative investigation of room temperature single electron shuttling between a single N-donor atom and the interface is the focus of attention under the influence of externally applied electric and magnetic field. To apprehend the realistic experimental configurations, central cell correction along with effective mass approach is adopted throughout the study. Furthermore, a detailed discussion currently explores the significant time scales implicated in the process and their suitability for experimental purposes. Theoretical estimates are also provided for all the external fields required to successfully achieve coherent single electron shuttling and their stable maintenance at the interface as required. The results presented in this work offer practical guidance for quantum electron control using N-donor atoms in Si at room temperature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_11475 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface Chakraborty, Soumya Samanta, Arup Mesoscale and Nanoscale Physics Materials Science The manuscript theoretically discusses various important aspects for donor atom based single qubit operations in silicon (Si) quantum computer architecture at room temperature using a single nitrogen (N) deep-donor close to the Si/SiO2 interface. Quantitative investigation of room temperature single electron shuttling between a single N-donor atom and the interface is the focus of attention under the influence of externally applied electric and magnetic field. To apprehend the realistic experimental configurations, central cell correction along with effective mass approach is adopted throughout the study. Furthermore, a detailed discussion currently explores the significant time scales implicated in the process and their suitability for experimental purposes. Theoretical estimates are also provided for all the external fields required to successfully achieve coherent single electron shuttling and their stable maintenance at the interface as required. The results presented in this work offer practical guidance for quantum electron control using N-donor atoms in Si at room temperature. |
| title | Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2401.11475 |