Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

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Main Authors: Laxmeesha, Prajwal M., Tucker, Tessa D., Rai, Rajeev Kumar, Li, Shuchen, Yoo, Myoung-Woo, Stach, Eric A., Hoffmann, Axel, May, Steven J.
Format: Preprint
Published: 2024
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author Laxmeesha, Prajwal M.
Tucker, Tessa D.
Rai, Rajeev Kumar
Li, Shuchen
Yoo, Myoung-Woo
Stach, Eric A.
Hoffmann, Axel
May, Steven J.
author_facet Laxmeesha, Prajwal M.
Tucker, Tessa D.
Rai, Rajeev Kumar
Li, Shuchen
Yoo, Myoung-Woo
Stach, Eric A.
Hoffmann, Axel
May, Steven J.
contents Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.
format Preprint
id arxiv_https___arxiv_org_abs_2401_11662
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Laxmeesha, Prajwal M.
Tucker, Tessa D.
Rai, Rajeev Kumar
Li, Shuchen
Yoo, Myoung-Woo
Stach, Eric A.
Hoffmann, Axel
May, Steven J.
Materials Science
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.
title Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
topic Materials Science
url https://arxiv.org/abs/2401.11662