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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.12787 |
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| _version_ | 1866911763104006144 |
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| author | Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Röder, Christian Beyer, Franziska C. Schüler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel |
| author_facet | Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Röder, Christian Beyer, Franziska C. Schüler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel |
| contents | Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10$^{-3}$ $Ω$cm to 10$^{2}$ $Ω$cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_12787 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Röder, Christian Beyer, Franziska C. Schüler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel Optics Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10$^{-3}$ $Ω$cm to 10$^{2}$ $Ω$cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution. |
| title | Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy |
| topic | Optics |
| url | https://arxiv.org/abs/2401.12787 |