Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films

Fuente: arXiv
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Main Authors: Prasetiyawati, Rahma Dhani, Jeong, Seung Gyo, Park, Chan-Koo, Song, Sehwan, Park, Sungkyun, Park, Tuson, Choi, Woo Seok
Format: Preprint
Published: 2024
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author Prasetiyawati, Rahma Dhani
Jeong, Seung Gyo
Park, Chan-Koo
Song, Sehwan
Park, Sungkyun
Park, Tuson
Choi, Woo Seok
author_facet Prasetiyawati, Rahma Dhani
Jeong, Seung Gyo
Park, Chan-Koo
Song, Sehwan
Park, Sungkyun
Park, Tuson
Choi, Woo Seok
contents 4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Above $T^{*}$, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of $ρ(T)$ to rigorously determine the $T^{*}$. We further demonstrate that the $T^{*}$ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines $T^{*}$. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
format Preprint
id arxiv_https___arxiv_org_abs_2401_13297
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films
Prasetiyawati, Rahma Dhani
Jeong, Seung Gyo
Park, Chan-Koo
Song, Sehwan
Park, Sungkyun
Park, Tuson
Choi, Woo Seok
Strongly Correlated Electrons
4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Above $T^{*}$, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of $ρ(T)$ to rigorously determine the $T^{*}$. We further demonstrate that the $T^{*}$ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines $T^{*}$. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
title Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2401.13297