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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.14044 |
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| _version_ | 1866910307812638720 |
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| author | He, Wenqing Zhang, Tianyi Zhou, Yongjian Wan, Caihua Wu, Hao Cui, Baoshan Xia, Jihao Zhang, Ran Guo, Tengyu Chen, Peng Zhao, Mingkun Jiang, Leina Grutter, Alexander Balakrishnan, Purnima P. Caruana, Andrew J. Kinane, Christy J. Langridge, Sean Yu, Guoqiang Song, Cheng Han, Xiufeng |
| author_facet | He, Wenqing Zhang, Tianyi Zhou, Yongjian Wan, Caihua Wu, Hao Cui, Baoshan Xia, Jihao Zhang, Ran Guo, Tengyu Chen, Peng Zhao, Mingkun Jiang, Leina Grutter, Alexander Balakrishnan, Purnima P. Caruana, Andrew J. Kinane, Christy J. Langridge, Sean Yu, Guoqiang Song, Cheng Han, Xiufeng |
| contents | Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_14044 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrical switching of the perpendicular Neel order in a collinear antiferromagnet He, Wenqing Zhang, Tianyi Zhou, Yongjian Wan, Caihua Wu, Hao Cui, Baoshan Xia, Jihao Zhang, Ran Guo, Tengyu Chen, Peng Zhao, Mingkun Jiang, Leina Grutter, Alexander Balakrishnan, Purnima P. Caruana, Andrew J. Kinane, Christy J. Langridge, Sean Yu, Guoqiang Song, Cheng Han, Xiufeng Applied Physics Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA. |
| title | Electrical switching of the perpendicular Neel order in a collinear antiferromagnet |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2401.14044 |