Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Fuente: arXiv
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Autores principales: Singh, Gyanendra, Guzman, Roger, Saïz, Guilhem, Zhou, Wu, Gazquez, Jaume, Fraxedas, Jordi, Masoudinia, Fereshteh, Winkler, Dag, Claeson, Tord, Bergeal, Nicolas, Herranz, Gervasi, Kalaboukhov, Alexei
Formato: Preprint
Publicado: 2024
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author Singh, Gyanendra
Guzman, Roger
Saïz, Guilhem
Zhou, Wu
Gazquez, Jaume
Fraxedas, Jordi
Masoudinia, Fereshteh
Winkler, Dag
Claeson, Tord
Bergeal, Nicolas
Herranz, Gervasi
Kalaboukhov, Alexei
author_facet Singh, Gyanendra
Guzman, Roger
Saïz, Guilhem
Zhou, Wu
Gazquez, Jaume
Fraxedas, Jordi
Masoudinia, Fereshteh
Winkler, Dag
Claeson, Tord
Bergeal, Nicolas
Herranz, Gervasi
Kalaboukhov, Alexei
contents SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems
format Preprint
id arxiv_https___arxiv_org_abs_2401_14365
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces
Singh, Gyanendra
Guzman, Roger
Saïz, Guilhem
Zhou, Wu
Gazquez, Jaume
Fraxedas, Jordi
Masoudinia, Fereshteh
Winkler, Dag
Claeson, Tord
Bergeal, Nicolas
Herranz, Gervasi
Kalaboukhov, Alexei
Superconductivity
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems
title Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces
topic Superconductivity
url https://arxiv.org/abs/2401.14365