Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

Documenti analoghi

• Coexistence of resistive capacitive and virtual inductive effects in memristive devices
  di: Yarragolla, Sahitya, et al.
  Pubblicazione: (2024)
• Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems
  di: Yarragolla, Sahitya, et al.
  Pubblicazione: (2024)
• Physics-based Modeling and Simulation of Nanoparticle Networks
  di: Hemke, Torben, et al.
  Pubblicazione: (2024)
• Hot-carrier thermal breakdown and S-type current-voltage characteristics in perforated graphene structures
  di: Ryzhii, V., et al.
  Pubblicazione: (2025)
• On the origin of filamentary resistive switching in oxides-based memristive devices
  di: Martir, R. Leal, et al.
  Pubblicazione: (2024)