Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator
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arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929334475816960 |
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| author | Martín-Romero, Fernando Gómez, Víctor Jesús |
| author_facet | Martín-Romero, Fernando Gómez, Víctor Jesús |
| contents | We present the design, simulation and optimization of a graphene-on-silicon nitride (GOSiN) integrated waveguide dual-mode electro-absorption modulator operating with a speed between 27-109 GHz and an energy consumption below 6 pJ/bit. This device individually modulates the TE$_0$ and TE$_1$ modes in a single-arm dual-mode waveguide with modulation depths up to 316 dB/cm and 273 dB/cm, respectively. It has promising applications in Multimode Division Multiplexing (MDM) systems, where single-mode modulation induces high losses and costs. We have started from the design of GOSiN TE$_0$ and TE$_1$ passive low-loss mode filters. Then, applying a gate voltage to graphene via transparent IHO electrodes, we have combined both filters and shown that the light absorption can be modulated to obtain four logical values in transmission: (0,0), (0,1), (1,0) and (1,1). Our proposed devices can potentially boost the development of efficient MDM systems for ultra-fast on-chip interconnections. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_14812 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator Martín-Romero, Fernando Gómez, Víctor Jesús Applied Physics Optics We present the design, simulation and optimization of a graphene-on-silicon nitride (GOSiN) integrated waveguide dual-mode electro-absorption modulator operating with a speed between 27-109 GHz and an energy consumption below 6 pJ/bit. This device individually modulates the TE$_0$ and TE$_1$ modes in a single-arm dual-mode waveguide with modulation depths up to 316 dB/cm and 273 dB/cm, respectively. It has promising applications in Multimode Division Multiplexing (MDM) systems, where single-mode modulation induces high losses and costs. We have started from the design of GOSiN TE$_0$ and TE$_1$ passive low-loss mode filters. Then, applying a gate voltage to graphene via transparent IHO electrodes, we have combined both filters and shown that the light absorption can be modulated to obtain four logical values in transmission: (0,0), (0,1), (1,0) and (1,1). Our proposed devices can potentially boost the development of efficient MDM systems for ultra-fast on-chip interconnections. |
| title | Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2401.14812 |