Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866913211169636352 |
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| author | Tijent, Fatima Z. Faqir, Mustapha Voss, Paul L. Salvestrini, Jean-Paul Ougazzaden, Abdallah |
| author_facet | Tijent, Fatima Z. Faqir, Mustapha Voss, Paul L. Salvestrini, Jean-Paul Ougazzaden, Abdallah |
| contents | In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507 K in SiO2/GaN/sapphire to 372 K in h-BN/GaN/diamond HEMT. The temperature decrease enhances the drain current and transconductance to 900 mA/mm and 250 mS/mm, corresponding to a 47 % improvement. In addition, the total thermal resistance Rth is reduced by a factor of 5 from 27 K.mm/W in GaN/sapphire HEMT to 5.5 K.mm/W in GaN/diamond HEMT. This study indicates that h-BN integration in GaN HEMT as a top heat spreader and a release layer for transfer to diamond substrate can be a promising solution to reduce self-heating effects and extend the device lifetime and reliability. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_14880 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study Tijent, Fatima Z. Faqir, Mustapha Voss, Paul L. Salvestrini, Jean-Paul Ougazzaden, Abdallah Computational Physics Applied Physics In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507 K in SiO2/GaN/sapphire to 372 K in h-BN/GaN/diamond HEMT. The temperature decrease enhances the drain current and transconductance to 900 mA/mm and 250 mS/mm, corresponding to a 47 % improvement. In addition, the total thermal resistance Rth is reduced by a factor of 5 from 27 K.mm/W in GaN/sapphire HEMT to 5.5 K.mm/W in GaN/diamond HEMT. This study indicates that h-BN integration in GaN HEMT as a top heat spreader and a release layer for transfer to diamond substrate can be a promising solution to reduce self-heating effects and extend the device lifetime and reliability. |
| title | Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study |
| topic | Computational Physics Applied Physics |
| url | https://arxiv.org/abs/2401.14880 |