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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.15070 |
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| _version_ | 1866929234021187584 |
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| author | Xu, P. Luo, H. |
| author_facet | Xu, P. Luo, H. |
| contents | The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in conduction channels in transistors with dimensions close to those presently used. We use the standard configuration of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs), as a simplified model to provide an estimate of the effect of quantization with respect to the dimensions of the conduction channel. The study shows simulated results of drain currents for various combinations of dimensions, in which distinguishable current levels as a function of the applied gate bias can be obtained at room temperature. The same qualitative dependence on dimensions is expected to apply to the state-of-the-art transistor architectures with dimensions near this range, such as fin field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs). The results show that utilizing quantized states in the conduction channel for multinary computation has become a possibility with their present dimensions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_15070 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Quantization of Charge Carriers in Conduction Channels of Si-Based Field-Effect Transistors for Multinary Computation Xu, P. Luo, H. Mesoscale and Nanoscale Physics The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in conduction channels in transistors with dimensions close to those presently used. We use the standard configuration of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs), as a simplified model to provide an estimate of the effect of quantization with respect to the dimensions of the conduction channel. The study shows simulated results of drain currents for various combinations of dimensions, in which distinguishable current levels as a function of the applied gate bias can be obtained at room temperature. The same qualitative dependence on dimensions is expected to apply to the state-of-the-art transistor architectures with dimensions near this range, such as fin field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs). The results show that utilizing quantized states in the conduction channel for multinary computation has become a possibility with their present dimensions. |
| title | Quantization of Charge Carriers in Conduction Channels of Si-Based Field-Effect Transistors for Multinary Computation |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2401.15070 |