All-electrical driving and probing of dressed states in a single spin

Fuente: arXiv
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Auteurs principaux: Bui, Hong T., Wolf, Christoph, Wang, Yu, Haze, Masahiro, Ardavan, Arzhang, Heinrich, Andreas J., Phark, Soo-hyon
Format: Preprint
Publié: 2024
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author Bui, Hong T.
Wolf, Christoph
Wang, Yu
Haze, Masahiro
Ardavan, Arzhang
Heinrich, Andreas J.
Phark, Soo-hyon
author_facet Bui, Hong T.
Wolf, Christoph
Wang, Yu
Haze, Masahiro
Ardavan, Arzhang
Heinrich, Andreas J.
Phark, Soo-hyon
contents The sub-nanometer distance between tip and sample in a scanning tunneling microscope (STM) enables the application of very large electric fields with a strength as high as ~ 1 GV/m. This has allowed for efficient electrical driving of Rabi oscillations of a single spin on a surface at a moderate radio-frequency (RF) voltage of the order of tens of millivolts. Here, we demonstrate the creation of dressed states of a single electron spin localized in the STM tunnel junction by using resonant RF driving voltages. The read-out of these dressed states was achieved all-electrical by a weakly coupled probe spin. Our work highlights the strength of the atomic-scale geometry inherent to the STM that facilitates creation and control of dressed states, which are promising for a design of atomically well-defined single spin quantum devices on surfaces.
format Preprint
id arxiv_https___arxiv_org_abs_2401_15440
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle All-electrical driving and probing of dressed states in a single spin
Bui, Hong T.
Wolf, Christoph
Wang, Yu
Haze, Masahiro
Ardavan, Arzhang
Heinrich, Andreas J.
Phark, Soo-hyon
Mesoscale and Nanoscale Physics
The sub-nanometer distance between tip and sample in a scanning tunneling microscope (STM) enables the application of very large electric fields with a strength as high as ~ 1 GV/m. This has allowed for efficient electrical driving of Rabi oscillations of a single spin on a surface at a moderate radio-frequency (RF) voltage of the order of tens of millivolts. Here, we demonstrate the creation of dressed states of a single electron spin localized in the STM tunnel junction by using resonant RF driving voltages. The read-out of these dressed states was achieved all-electrical by a weakly coupled probe spin. Our work highlights the strength of the atomic-scale geometry inherent to the STM that facilitates creation and control of dressed states, which are promising for a design of atomically well-defined single spin quantum devices on surfaces.
title All-electrical driving and probing of dressed states in a single spin
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2401.15440