Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
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2024
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| _version_ | 1866917577719021568 |
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| author | Soref, Richard De Leonardis, Francesco De Carlo, Martino Passaro, Vittorio M. N. |
| author_facet | Soref, Richard De Leonardis, Francesco De Carlo, Martino Passaro, Vittorio M. N. |
| contents | This theoretical modeling and simulation paper presents designs and projected performances of two non-volatile, broadband, on-chip 2-by-2 electro-optical switches based upon the germanium-on-insulator (GeOI) photonic-electronic platform operating at the 2.5 $μ$m mid-infrared wavelength. These compact devices facilitate large-scale integration on a monolithic wafer where all components are made of group-IV semiconductors. The switches are the two-waveguide directional coupler (DC) and the Mach-Zehnder interferometer (MZI). A thin-film graphene Joule-effect micro-heater is assumed on the planarized GeOI device to change the phase (reversably) of DC-slot-embedded Sb$_2$Se$_3$ phase-change material (PCM) from crystalline to amorphous. The MZI has this PCM within its slotted-arm waveguides. Simulations show high-performance bistable or multi-stable cross-bar switching in both devices. The 2-by-2 DC has an active coupling length of 17 $μ$m, 130 nm gap, and a footprint of 5 $μ$m -by- 31 $μ$m. The device bandwidth is 30 nm over a wavelength range where cross and bar insertion losses IL are less than 0.3 dB, and where optical crosstalk is less than -15 dB. Results for the 2-by-2 MZI show crossbar switching attained with a 7.8 $μ$m-length Sb$_2$Se$_3$ slot and a 5 $μ$m -by- 51 $μ$m switch footprint. Stable, multi-level switching in both devices is attained via partial amorphization. Thermal modeling shows that careful control of the voltage-pulse amplitude V applied to graphene (rectangular pulse duration of 500 ns) can give 32 levels, for example, using V in the range from 6.18 to 7.75 Volts. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_15999 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform Soref, Richard De Leonardis, Francesco De Carlo, Martino Passaro, Vittorio M. N. Optics Applied Physics This theoretical modeling and simulation paper presents designs and projected performances of two non-volatile, broadband, on-chip 2-by-2 electro-optical switches based upon the germanium-on-insulator (GeOI) photonic-electronic platform operating at the 2.5 $μ$m mid-infrared wavelength. These compact devices facilitate large-scale integration on a monolithic wafer where all components are made of group-IV semiconductors. The switches are the two-waveguide directional coupler (DC) and the Mach-Zehnder interferometer (MZI). A thin-film graphene Joule-effect micro-heater is assumed on the planarized GeOI device to change the phase (reversably) of DC-slot-embedded Sb$_2$Se$_3$ phase-change material (PCM) from crystalline to amorphous. The MZI has this PCM within its slotted-arm waveguides. Simulations show high-performance bistable or multi-stable cross-bar switching in both devices. The 2-by-2 DC has an active coupling length of 17 $μ$m, 130 nm gap, and a footprint of 5 $μ$m -by- 31 $μ$m. The device bandwidth is 30 nm over a wavelength range where cross and bar insertion losses IL are less than 0.3 dB, and where optical crosstalk is less than -15 dB. Results for the 2-by-2 MZI show crossbar switching attained with a 7.8 $μ$m-length Sb$_2$Se$_3$ slot and a 5 $μ$m -by- 51 $μ$m switch footprint. Stable, multi-level switching in both devices is attained via partial amorphization. Thermal modeling shows that careful control of the voltage-pulse amplitude V applied to graphene (rectangular pulse duration of 500 ns) can give 32 levels, for example, using V in the range from 6.18 to 7.75 Volts. |
| title | Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2401.15999 |