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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.16057 |
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| _version_ | 1866910310339706880 |
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| author | Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas |
| author_facet | Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas |
| contents | This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A physics-inspired compact model is used to effectively capture the underlying mechanisms governing resistive switching in NbO$_{\rm x}$ and BiFeO$_{3}$ based on memristive devices. The model includes different capacitive components in metal-insulator-metal structures to simulate capacitive effects. Drift and diffusion of particles are modeled and correlated with particles' inertia within the system. Using the model, we obtain the I-V characteristics of both devices that show good agreement with experimental findings and the corresponding C-V characteristics. This model also replicates observed non-zero crossing hysteresis in perovskite-based devices. Additionally, the study examines how the reactance of the device changes in response to variations in the device area and length. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16057 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Coexistence of resistive capacitive and virtual inductive effects in memristive devices Yarragolla, Sahitya Hemke, Torben Trieschmann, Jan Mussenbrock, Thomas Mesoscale and Nanoscale Physics This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A physics-inspired compact model is used to effectively capture the underlying mechanisms governing resistive switching in NbO$_{\rm x}$ and BiFeO$_{3}$ based on memristive devices. The model includes different capacitive components in metal-insulator-metal structures to simulate capacitive effects. Drift and diffusion of particles are modeled and correlated with particles' inertia within the system. Using the model, we obtain the I-V characteristics of both devices that show good agreement with experimental findings and the corresponding C-V characteristics. This model also replicates observed non-zero crossing hysteresis in perovskite-based devices. Additionally, the study examines how the reactance of the device changes in response to variations in the device area and length. |
| title | Coexistence of resistive capacitive and virtual inductive effects in memristive devices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2401.16057 |