A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | Fernández-Garrido, S., Grandal, J., Calleja, E., Sánchez-García, M. A., López-Romero, D. |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
par: Koblmüller, G., et autres
Publié: (2024)
par: Koblmüller, G., et autres
Publié: (2024)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
par: Fernández-Garrido, S., et autres
Publié: (2024)
par: Fernández-Garrido, S., et autres
Publié: (2024)
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
par: Fernández-Garrido, Sergio, et autres
Publié: (2024)
par: Fernández-Garrido, Sergio, et autres
Publié: (2024)
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
par: Gačević, Ž., et autres
Publié: (2024)
par: Gačević, Ž., et autres
Publié: (2024)
Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
par: Dinh, Duc V., et autres
Publié: (2024)
par: Dinh, Duc V., et autres
Publié: (2024)
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
par: Zettler, J. K., et autres
Publié: (2024)
par: Zettler, J. K., et autres
Publié: (2024)
Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
par: Kang, Jingxuan, et autres
Publié: (2024)
par: Kang, Jingxuan, et autres
Publié: (2024)
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
par: Ruiz, M Gómez, et autres
Publié: (2023)
par: Ruiz, M Gómez, et autres
Publié: (2023)
Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
par: Ardenghi, A., et autres
Publié: (2023)
par: Ardenghi, A., et autres
Publié: (2023)
Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
par: Dinh, Duc V., et autres
Publié: (2025)
par: Dinh, Duc V., et autres
Publié: (2025)
Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
par: Jarosz, Dawid, et autres
Publié: (2024)
par: Jarosz, Dawid, et autres
Publié: (2024)
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
par: Chen, Wenshan, et autres
Publié: (2024)
par: Chen, Wenshan, et autres
Publié: (2024)
Polarity-induced selective area epitaxy of GaN nanowires
par: Schiaber, Ziani de Souza, et autres
Publié: (2024)
par: Schiaber, Ziani de Souza, et autres
Publié: (2024)
Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
par: Ardenghi, A., et autres
Publié: (2022)
par: Ardenghi, A., et autres
Publié: (2022)
New insights into crystallographic relation and lattice dynamics effects in {CdO/MgO} superlattices grown by plasma-assisted molecular beam epitaxy
par: Wierzbicka, Aleksandra, et autres
Publié: (2025)
par: Wierzbicka, Aleksandra, et autres
Publié: (2025)
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
par: Cho, YongJin, et autres
Publié: (2026)
par: Cho, YongJin, et autres
Publié: (2026)
Orientation disparity in GaN/graphene/$m$-sapphire: control-based re-examination of thru-hole epitaxy
par: An, Su Young, et autres
Publié: (2023)
par: An, Su Young, et autres
Publié: (2023)
Arsenic diffusion in MOVPE-Grown GaAs/Ge epitaxial structures
par: Orejuela, V., et autres
Publié: (2024)
par: Orejuela, V., et autres
Publié: (2024)
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
par: Olszewski, Karol, et autres
Publié: (2025)
par: Olszewski, Karol, et autres
Publié: (2025)
Quantum oscillations of holes in GaN
par: Chang, Chuan F. C., et autres
Publié: (2025)
par: Chang, Chuan F. C., et autres
Publié: (2025)
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
par: Bhuiyan, A F M Anhar Uddin, et autres
Publié: (2022)
par: Bhuiyan, A F M Anhar Uddin, et autres
Publié: (2022)
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
par: Mondal, S., et autres
Publié: (2024)
par: Mondal, S., et autres
Publié: (2024)
InGaN Nanopixel Arrays on Single Crystal GaN Substrate
par: Anand, Nirmal, et autres
Publié: (2025)
par: Anand, Nirmal, et autres
Publié: (2025)
TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation
par: Beak, Gunhoon, et autres
Publié: (2025)
par: Beak, Gunhoon, et autres
Publié: (2025)
UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode
par: Boukhicha, Mohamed, et autres
Publié: (2024)
par: Boukhicha, Mohamed, et autres
Publié: (2024)
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
par: Fernández-Garrido, S., et autres
Publié: (2024)
par: Fernández-Garrido, S., et autres
Publié: (2024)
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
par: Chen, Yu-Hsin, et autres
Publié: (2026)
par: Chen, Yu-Hsin, et autres
Publié: (2026)
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
par: Fernández-Garrido, S., et autres
Publié: (2024)
par: Fernández-Garrido, S., et autres
Publié: (2024)
An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
par: Kawamura, Fumio, et autres
Publié: (2026)
par: Kawamura, Fumio, et autres
Publié: (2026)
On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
par: Duraz, Jules, et autres
Publié: (2024)
par: Duraz, Jules, et autres
Publié: (2024)
Off-stoichiometry engineering of the electrical and optical properties of SrNbO$_3$ by oxide molecular beam epitaxy
par: Palakkal, Jasnamol, et autres
Publié: (2024)
par: Palakkal, Jasnamol, et autres
Publié: (2024)
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
par: Matys, Maciej, et autres
Publié: (2024)
par: Matys, Maciej, et autres
Publié: (2024)
Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
par: Avdienko, Pavel S., et autres
Publié: (2026)
par: Avdienko, Pavel S., et autres
Publié: (2026)
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
par: Yao, Wenlong, et autres
Publié: (2026)
par: Yao, Wenlong, et autres
Publié: (2026)
Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
par: Casamento, Joseph, et autres
Publié: (2021)
par: Casamento, Joseph, et autres
Publié: (2021)
Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN
par: Pampili, Pietro, et autres
Publié: (2024)
par: Pampili, Pietro, et autres
Publié: (2024)
Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
par: Fernàndez-Garrido, Sergio, et autres
Publié: (2024)
par: Fernàndez-Garrido, Sergio, et autres
Publié: (2024)
Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
par: Yazawa, Keisuke, et autres
Publié: (2024)
par: Yazawa, Keisuke, et autres
Publié: (2024)
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
par: Turkulets, Yury, et autres
Publié: (2024)
par: Turkulets, Yury, et autres
Publié: (2024)
Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
par: Verma, Darpan, et autres
Publié: (2020)
par: Verma, Darpan, et autres
Publié: (2020)
Documents similaires
-
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
par: Koblmüller, G., et autres
Publié: (2024) -
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
par: Fernández-Garrido, S., et autres
Publié: (2024) -
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
par: Fernández-Garrido, Sergio, et autres
Publié: (2024) -
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
par: Gačević, Ž., et autres
Publié: (2024) -
Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
par: Dinh, Duc V., et autres
Publié: (2024)