Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
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arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866909087355109376 |
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| author | Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San |
| author_facet | Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San |
| contents | High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, policrystaline stoichiometric Gd2O3 films were obtained by HPS. MIS with the dielctric deposited at higher pressures also present lower flatband voltage shifts in the C-V hysteris curves. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16499 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San Materials Science Applied Physics High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, policrystaline stoichiometric Gd2O3 films were obtained by HPS. MIS with the dielctric deposited at higher pressures also present lower flatband voltage shifts in the C-V hysteris curves. |
| title | Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2401.16499 |