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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.16502 |
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| _version_ | 1866914658718318592 |
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| author | Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Toledano-Luque, María del Prado, Álvaro Blázquez, Antonio Lucía, María Luisa |
| author_facet | Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Toledano-Luque, María del Prado, Álvaro Blázquez, Antonio Lucía, María Luisa |
| contents | AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16502 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Toledano-Luque, María del Prado, Álvaro Blázquez, Antonio Lucía, María Luisa Materials Science Applied Physics AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage. |
| title | Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2401.16502 |