Polarity-induced selective area epitaxy of GaN nanowires
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929228233048064 |
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| author | Schiaber, Ziani de Souza Calabrese, Gabriele Kong, Xiang Trampert, Achim Jenichen, Bernd da Silva, José Humberto Dias Geelhaar, Lutz Brandt, Oliver Fernández-Garrido, Sergio |
| author_facet | Schiaber, Ziani de Souza Calabrese, Gabriele Kong, Xiang Trampert, Achim Jenichen, Bernd da Silva, José Humberto Dias Geelhaar, Lutz Brandt, Oliver Fernández-Garrido, Sergio |
| contents | We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically uniform cation-polar substrates. By in situ depositing and nitridating Si on a Ga-polar GaN film, we locally reverse the polarity to induce the selective area epitaxy of N-polar GaN nanowires. We show that the nanowire number density can be controlled over several orders of magnitude by varying the amount of pre-deposited Si. Using this growth approach, we demonstrate the synthesis of single-crystalline and uncoalesced nanowires with diameters as small as 20 nm. The achievement of nanowire number densities low enough to prevent the shadowing of the nanowire sidewalls from the impinging fluxes paves the way for the realization of homogeneous core-shell heterostructures without the need of using ex situ pre-patterned substrates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16514 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Polarity-induced selective area epitaxy of GaN nanowires Schiaber, Ziani de Souza Calabrese, Gabriele Kong, Xiang Trampert, Achim Jenichen, Bernd da Silva, José Humberto Dias Geelhaar, Lutz Brandt, Oliver Fernández-Garrido, Sergio Applied Physics We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically uniform cation-polar substrates. By in situ depositing and nitridating Si on a Ga-polar GaN film, we locally reverse the polarity to induce the selective area epitaxy of N-polar GaN nanowires. We show that the nanowire number density can be controlled over several orders of magnitude by varying the amount of pre-deposited Si. Using this growth approach, we demonstrate the synthesis of single-crystalline and uncoalesced nanowires with diameters as small as 20 nm. The achievement of nanowire number densities low enough to prevent the shadowing of the nanowire sidewalls from the impinging fluxes paves the way for the realization of homogeneous core-shell heterostructures without the need of using ex situ pre-patterned substrates. |
| title | Polarity-induced selective area epitaxy of GaN nanowires |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2401.16514 |