Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909087736791040 |
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| author | Zettler, Johannes K. Corfdir, Pierre Hauswald, Christian Luna, Esperanza Jahn, Uwe Flissikowski, Timur Schmidt, Emanuel Ronning, Carsten Trampert, Achim Geelhaar, Lutz Grahn, Holger T. Brandt, Oliver Fernández-Garrido, Sergio |
| author_facet | Zettler, Johannes K. Corfdir, Pierre Hauswald, Christian Luna, Esperanza Jahn, Uwe Flissikowski, Timur Schmidt, Emanuel Ronning, Carsten Trampert, Achim Geelhaar, Lutz Grahn, Holger T. Brandt, Oliver Fernández-Garrido, Sergio |
| contents | The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16868 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature Zettler, Johannes K. Corfdir, Pierre Hauswald, Christian Luna, Esperanza Jahn, Uwe Flissikowski, Timur Schmidt, Emanuel Ronning, Carsten Trampert, Achim Geelhaar, Lutz Grahn, Holger T. Brandt, Oliver Fernández-Garrido, Sergio Mesoscale and Nanoscale Physics Applied Physics The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement. |
| title | Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2401.16868 |