Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2401.16887 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866909087757762560 |
|---|---|
| author | Fernàndez-Garrido, Sergio Ubben, Kai U. Herfort, Jens Gao, Cunxu Brandt, Oliver |
| author_facet | Fernàndez-Garrido, Sergio Ubben, Kai U. Herfort, Jens Gao, Cunxu Brandt, Oliver |
| contents | We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si] = 5 $\times$ 10$^{18}$ cm$^{-3}$. The Schottky barrier height of the clean, epitaxial Fe/GaN interface is determined by both current-voltage-temperature and capacitance-voltage techniques to be (1.47 $\pm$ 0.09) eV. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_16887 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts Fernàndez-Garrido, Sergio Ubben, Kai U. Herfort, Jens Gao, Cunxu Brandt, Oliver Materials Science We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si] = 5 $\times$ 10$^{18}$ cm$^{-3}$. The Schottky barrier height of the clean, epitaxial Fe/GaN interface is determined by both current-voltage-temperature and capacitance-voltage techniques to be (1.47 $\pm$ 0.09) eV. |
| title | Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.16887 |