High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866914659806740480 |
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| author | Pampillón, María Ángela Andrés, Enrique San Feijoo, Pedro Carlos Fierro, José Luis G. |
| author_facet | Pampillón, María Ángela Andrés, Enrique San Feijoo, Pedro Carlos Fierro, José Luis G. |
| contents | This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_17332 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation Pampillón, María Ángela Andrés, Enrique San Feijoo, Pedro Carlos Fierro, José Luis G. Materials Science Applied Physics This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated. |
| title | High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2401.17332 |