In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
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arXiv
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| Hauptverfasser: | , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917578565222400 |
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| author | Koblmüller, G. Fernández-Garrido, S. Calleja, E. Speck, J. S. |
| author_facet | Koblmüller, G. Fernández-Garrido, S. Calleja, E. Speck, J. S. |
| contents | Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_17341 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN Koblmüller, G. Fernández-Garrido, S. Calleja, E. Speck, J. S. Applied Physics Materials Science Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition. |
| title | In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2401.17341 |