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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2401.17608 |
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| _version_ | 1866916111141830656 |
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| author | Han, Lei Fu, Xizhi Peng, Rui Cheng, Xingkai Dai, Jiankun Liu, Liangyang Li, Yidian Zhang, Yichi Zhu, Wenxuan Bai, Hua Zhou, Yongjian Liang, Shixuan Chen, Chong Wang, Qian Chen, Xianzhe Yang, Luyi Zhang, Yang Song, Cheng Liu, Junwei Pan, Feng |
| author_facet | Han, Lei Fu, Xizhi Peng, Rui Cheng, Xingkai Dai, Jiankun Liu, Liangyang Li, Yidian Zhang, Yichi Zhu, Wenxuan Bai, Hua Zhou, Yongjian Liang, Shixuan Chen, Chong Wang, Qian Chen, Xianzhe Yang, Luyi Zhang, Yang Song, Cheng Liu, Junwei Pan, Feng |
| contents | Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2401_17608 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrical 180o switching of Néel vector in spin-splitting antiferromagnet Han, Lei Fu, Xizhi Peng, Rui Cheng, Xingkai Dai, Jiankun Liu, Liangyang Li, Yidian Zhang, Yichi Zhu, Wenxuan Bai, Hua Zhou, Yongjian Liang, Shixuan Chen, Chong Wang, Qian Chen, Xianzhe Yang, Luyi Zhang, Yang Song, Cheng Liu, Junwei Pan, Feng Materials Science Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet. |
| title | Electrical 180o switching of Néel vector in spin-splitting antiferromagnet |
| topic | Materials Science |
| url | https://arxiv.org/abs/2401.17608 |