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Bibliographic Details
Main Authors:	Han, Lei, Fu, Xizhi, Peng, Rui, Cheng, Xingkai, Dai, Jiankun, Liu, Liangyang, Li, Yidian, Zhang, Yichi, Zhu, Wenxuan, Bai, Hua, Zhou, Yongjian, Liang, Shixuan, Chen, Chong, Wang, Qian, Chen, Xianzhe, Yang, Luyi, Zhang, Yang, Song, Cheng, Liu, Junwei, Pan, Feng
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	https://arxiv.org/abs/2401.17608
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Table of Contents:

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

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