Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering

Fuente: arXiv
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Autores principales: Pálinkás, András, Márity, Krisztián, Kandrai, Konrád, Tajkov, Zoltán, Gmitra, Martin, Vancsó, Péter, Tapasztó, Levente, Nemes-Incze, Péter
Formato: Preprint
Publicado: 2024
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author Pálinkás, András
Márity, Krisztián
Kandrai, Konrád
Tajkov, Zoltán
Gmitra, Martin
Vancsó, Péter
Tapasztó, Levente
Nemes-Incze, Péter
author_facet Pálinkás, András
Márity, Krisztián
Kandrai, Konrád
Tajkov, Zoltán
Gmitra, Martin
Vancsó, Péter
Tapasztó, Levente
Nemes-Incze, Péter
contents Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating a precise method to identify flawless rhombohedral stacking. Overcoming this challenge is difficult because the established technique for stacking sequence identification, based on the Raman 2D peak, fails in thick RG samples. We demonstrate that the strong layer dependence of the band structure can be harnessed to identify RG without stacking faults, or alternatively, to detect their presence. For thicknesses ranging from 3 to 12 layers, we show that each perfect RG structure presents distinctive peak positions in electronic Raman scattering (ERS). This measurement can be carried out using a conventional confocal Raman spectrometer at room temperature, using visible excitation wavelengths. Consequently, this overcomes the identification challenge by providing a simple and fast optical measurement technique, thereby helping to establish RG as a platform for studying strong correlations in one of the simplest crystals possible.
format Preprint
id arxiv_https___arxiv_org_abs_2401_17779
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
Pálinkás, András
Márity, Krisztián
Kandrai, Konrád
Tajkov, Zoltán
Gmitra, Martin
Vancsó, Péter
Tapasztó, Levente
Nemes-Incze, Péter
Mesoscale and Nanoscale Physics
Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating a precise method to identify flawless rhombohedral stacking. Overcoming this challenge is difficult because the established technique for stacking sequence identification, based on the Raman 2D peak, fails in thick RG samples. We demonstrate that the strong layer dependence of the band structure can be harnessed to identify RG without stacking faults, or alternatively, to detect their presence. For thicknesses ranging from 3 to 12 layers, we show that each perfect RG structure presents distinctive peak positions in electronic Raman scattering (ERS). This measurement can be carried out using a conventional confocal Raman spectrometer at room temperature, using visible excitation wavelengths. Consequently, this overcomes the identification challenge by providing a simple and fast optical measurement technique, thereby helping to establish RG as a platform for studying strong correlations in one of the simplest crystals possible.
title Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2401.17779