Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation

Fuente: arXiv
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Auteurs principaux: Matteocci, Fabio, Di Girolamo, Diego, Vidon, Guillame, Barichello, Jessica, Di Giacomo, Francesco, Jafarzadeh, Farshad, Paci, Barbara, Generosi, Amanda, Kim, Minjin, Castriotta, Luigi Angelo, Frégnaux, Mathieu, Guillemoles, Jean-François, Schulz, Philip, Ory, Daniel, Cacovich, Stefania, Di Carlo, Aldo
Format: Preprint
Publié: 2024
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author Matteocci, Fabio
Di Girolamo, Diego
Vidon, Guillame
Barichello, Jessica
Di Giacomo, Francesco
Jafarzadeh, Farshad
Paci, Barbara
Generosi, Amanda
Kim, Minjin
Castriotta, Luigi Angelo
Frégnaux, Mathieu
Guillemoles, Jean-François
Schulz, Philip
Ory, Daniel
Cacovich, Stefania
Di Carlo, Aldo
author_facet Matteocci, Fabio
Di Girolamo, Diego
Vidon, Guillame
Barichello, Jessica
Di Giacomo, Francesco
Jafarzadeh, Farshad
Paci, Barbara
Generosi, Amanda
Kim, Minjin
Castriotta, Luigi Angelo
Frégnaux, Mathieu
Guillemoles, Jean-François
Schulz, Philip
Ory, Daniel
Cacovich, Stefania
Di Carlo, Aldo
contents Efficient semi-transparent solar cells can trigger the adoption of building integrated photovoltaics. Halide perovskites are particularly suitable in this respect owing to their tunable bandgap. Main drawbacks in the development of transparent perovskite solar cells are the high Voc deficit and the difficulties in depositing thin films over large area substrates, given the low solubility of bromide and chloride precursors. In this work, we develop a 2D and passivation strategies for the high band-gap Br perovskite able to reduce charge recombination and consequently improving the open-circuit voltage. We demonstrate 1cm 2 perovskite solar cells with Voc up to 1.73 V (1.83 eV QFLS) and a PCE of 8.2%. The AVT exceeds 70% by means of a bifacial light management and a record light utilization efficiency of 5.72 is achieved, setting a new standard for transparent photovoltaics. Moreover, we show the high ceiling of our technology towards IoT application due to a bifaciality factor of 87% along with 17% PCE under indoor lighting. Finally, the up-scaling has been demonstrated fabricating 20cm 2 -active area modules with PCE of 7.3% and Voc per cell up to 1.65V.
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institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation
Matteocci, Fabio
Di Girolamo, Diego
Vidon, Guillame
Barichello, Jessica
Di Giacomo, Francesco
Jafarzadeh, Farshad
Paci, Barbara
Generosi, Amanda
Kim, Minjin
Castriotta, Luigi Angelo
Frégnaux, Mathieu
Guillemoles, Jean-François
Schulz, Philip
Ory, Daniel
Cacovich, Stefania
Di Carlo, Aldo
Applied Physics
Efficient semi-transparent solar cells can trigger the adoption of building integrated photovoltaics. Halide perovskites are particularly suitable in this respect owing to their tunable bandgap. Main drawbacks in the development of transparent perovskite solar cells are the high Voc deficit and the difficulties in depositing thin films over large area substrates, given the low solubility of bromide and chloride precursors. In this work, we develop a 2D and passivation strategies for the high band-gap Br perovskite able to reduce charge recombination and consequently improving the open-circuit voltage. We demonstrate 1cm 2 perovskite solar cells with Voc up to 1.73 V (1.83 eV QFLS) and a PCE of 8.2%. The AVT exceeds 70% by means of a bifacial light management and a record light utilization efficiency of 5.72 is achieved, setting a new standard for transparent photovoltaics. Moreover, we show the high ceiling of our technology towards IoT application due to a bifaciality factor of 87% along with 17% PCE under indoor lighting. Finally, the up-scaling has been demonstrated fabricating 20cm 2 -active area modules with PCE of 7.3% and Voc per cell up to 1.65V.
title Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation
topic Applied Physics
url https://arxiv.org/abs/2401.17816