Hydrogen reactions with dopants and impurities in solar silicon from first principles
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866929230849245184 |
|---|---|
| author | Coutinho, José Gomes, Diana Torres, Vitor J. B. Fattah, Tarek O. Abdul Markevich, Vladimir P. Peaker, Anthony R. |
| author_facet | Coutinho, José Gomes, Diana Torres, Vitor J. B. Fattah, Tarek O. Abdul Markevich, Vladimir P. Peaker, Anthony R. |
| contents | We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00434 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hydrogen reactions with dopants and impurities in solar silicon from first principles Coutinho, José Gomes, Diana Torres, Vitor J. B. Fattah, Tarek O. Abdul Markevich, Vladimir P. Peaker, Anthony R. Materials Science We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models. |
| title | Hydrogen reactions with dopants and impurities in solar silicon from first principles |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.00434 |