Electric field tunable edge transport in Bernal stacked trilayer graphene
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866911768955060224 |
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| author | Srivastav, Saurabh Kumar Udupa, Adithi Watanabe, K. Taniguchi, T. Sen, Diptiman Das, Anindya |
| author_facet | Srivastav, Saurabh Kumar Udupa, Adithi Watanabe, K. Taniguchi, T. Sen, Diptiman Das, Anindya |
| contents | This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields ($D$) and temperatures ($T$). Our measurements revealed that the non-local resistance ($R_{NL}$) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance ($R_{L}$) only when the $D$ exceeds a critical value of $\sim0.2$ V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ($T<25$ K). Further, the value of $R_{NL}$ decreases in a linear fashion as the channel length ($L$) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00461 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electric field tunable edge transport in Bernal stacked trilayer graphene Srivastav, Saurabh Kumar Udupa, Adithi Watanabe, K. Taniguchi, T. Sen, Diptiman Das, Anindya Mesoscale and Nanoscale Physics This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields ($D$) and temperatures ($T$). Our measurements revealed that the non-local resistance ($R_{NL}$) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance ($R_{L}$) only when the $D$ exceeds a critical value of $\sim0.2$ V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ($T<25$ K). Further, the value of $R_{NL}$ decreases in a linear fashion as the channel length ($L$) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied. |
| title | Electric field tunable edge transport in Bernal stacked trilayer graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.00461 |