Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Fuente: arXiv

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Bibliographic Details
Main Authors:	Fernández-Garrido, S., Redondo-Cubero, A., Gago, R., Bertram, F., Christen, J., Luna, E., Trampert, A., Pereiro, J., Muñoz, E., Calleja, E.
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2402.00581