Saved in:
| Main Authors: | Fernández-Garrido, S., Pereiro, J., González-Posada, F., Muñoz, E., Calleja, E., Redondo-Cubero, A., Gago, R. |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2402.00582 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
by: Koblmüller, G., et al.
Published: (2024)
by: Koblmüller, G., et al.
Published: (2024)
Electronic transport properties of titanium nitride grown by molecular beam epitaxy
by: Takiguchi, Kosuke, et al.
Published: (2025)
by: Takiguchi, Kosuke, et al.
Published: (2025)
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
by: M. López López
Published: (2001)
by: M. López López
Published: (2001)
Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
by: Vergnaud, C., et al.
Published: (2024)
by: Vergnaud, C., et al.
Published: (2024)
Superconductivity in tin telluride films grown by molecular beam epitaxy
by: Gonzalez, Antonio, et al.
Published: (2025)
by: Gonzalez, Antonio, et al.
Published: (2025)
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
by: Ruiz, M Gómez, et al.
Published: (2023)
by: Ruiz, M Gómez, et al.
Published: (2023)
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
by: Saddik, Karim Ben, et al.
Published: (2026)
by: Saddik, Karim Ben, et al.
Published: (2026)
A single-phase epitaxially grown ferroelectric perovskite nitride
by: Choi, Songhee, et al.
Published: (2024)
by: Choi, Songhee, et al.
Published: (2024)
Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy
by: Yu, Huabin, et al.
Published: (2026)
by: Yu, Huabin, et al.
Published: (2026)
Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
by: J.B. Rojas-Trigos
Published: (2016)
by: J.B. Rojas-Trigos
Published: (2016)
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)
by: Gačević, Ž., et al.
Published: (2024)
Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025)
by: Dinh, Duc V., et al.
Published: (2025)
Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy
by: Birkhölzer, Yorick A., et al.
Published: (2026)
by: Birkhölzer, Yorick A., et al.
Published: (2026)
Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
by: L.F. Zou
Published: (1999)
by: L.F. Zou
Published: (1999)
Highly efficient individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
by: I. Hernández
Published: (2001)
by: I. Hernández
Published: (2001)
Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2024)
by: Dinh, Duc V., et al.
Published: (2024)
Photoluminescence studies of Mg-doped gallium nitride films grown by metalorganic chemical vapor deposition
by: C. Guarneros
Published: (2012)
by: C. Guarneros
Published: (2012)
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
by: Zettler, J. K., et al.
Published: (2024)
by: Zettler, J. K., et al.
Published: (2024)
Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
by: Li, Yuanzhao, et al.
Published: (2024)
by: Li, Yuanzhao, et al.
Published: (2024)
Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
by: Brito, Daniel, et al.
Published: (2022)
by: Brito, Daniel, et al.
Published: (2022)
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
by: Schaefer, Stephen, et al.
Published: (2024)
by: Schaefer, Stephen, et al.
Published: (2024)
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
by: John, Philipp, et al.
Published: (2023)
by: John, Philipp, et al.
Published: (2023)
CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride
by: Maciaszek, Marek, et al.
Published: (2025)
by: Maciaszek, Marek, et al.
Published: (2025)
Growth of quantum dots by droplet etching epitaxy in molecular beam epitaxy: theory, practice, and review
by: Gossink, Declan, et al.
Published: (2026)
by: Gossink, Declan, et al.
Published: (2026)
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
by: Fernández-Garrido, S., et al.
Published: (2024)
by: Fernández-Garrido, S., et al.
Published: (2024)
New insights into crystallographic relation and lattice dynamics effects in {CdO/MgO} superlattices grown by plasma-assisted molecular beam epitaxy
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy
by: Bai, Yunhe, et al.
Published: (2024)
by: Bai, Yunhe, et al.
Published: (2024)
Moire based strain analysis in wurtzite GaAs -- rock-salt (Pb,Sn)Te core-shell nanowires grown by molecular beam epitaxy
by: Wojcik, Maciej, et al.
Published: (2026)
by: Wojcik, Maciej, et al.
Published: (2026)
Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B
by: Hilse, Maria, et al.
Published: (2024)
by: Hilse, Maria, et al.
Published: (2024)
Electronic band structure of II-VI quaternary alloys in a tigh-binding approach
by: Garcia A.E. et al
Published: (2000)
by: Garcia A.E. et al
Published: (2000)
Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
by: Y. E. Bravo-García
Published: (2012)
by: Y. E. Bravo-García
Published: (2012)
Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy
by: Lysak, Anastasiia, et al.
Published: (2025)
by: Lysak, Anastasiia, et al.
Published: (2025)
Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates
by: Ji, Pengfei, et al.
Published: (2025)
by: Ji, Pengfei, et al.
Published: (2025)
Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
by: Gokhale, Vikrant J., et al.
Published: (2025)
by: Gokhale, Vikrant J., et al.
Published: (2025)
Initial molecular beam epitaxial growth of ZnSe on Si substrates
by: V.H. Méndez-García
Published: (1997)
by: V.H. Méndez-García
Published: (1997)
Unstable states of InxAlyGa1-x-yN quaternary alloys
by: S.F. Díaz Albarrán
Published: (2010)
by: S.F. Díaz Albarrán
Published: (2010)
Similar Items
-
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024) -
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
by: Fernández-Garrido, S., et al.
Published: (2024) -
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
by: Koblmüller, G., et al.
Published: (2024) -
Electronic transport properties of titanium nitride grown by molecular beam epitaxy
by: Takiguchi, Kosuke, et al.
Published: (2025) -
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
by: Fernández-Garrido, S., et al.
Published: (2024)